IXTN21N100 MOSFET MOD.21A 1000V N-CH SOT227B H.VOLTAGE CHASSI

IXTN21N100 MOSFET MOD.21A 1000V N-CH SOT227B H.VOLTAGE CHASSI Description

IXTN21N100 MOSFET MOD.21A 1000V N-CH SOT227B H.VOLTAGE CHASSI The IXTN21N100, manufactured by IXYS, is a high-performance module MOSFET designed for mosfet mod.21a 1000v n-ch sot227b h.voltage chassi. It provides excellent performance and reliability for high-power applications. The MOSFET supports a current rating of 21A and a voltage rating of 1kV, with a low on-resistance of 550m Ohms ensuring efficient operation. It can handle a power dissipation of up to 500W, making it ideal for demanding environments. The reverse recovery time is 1us, allowing for fast switching. Operating within a temperature range of -55°C~+150°C, it offers robust performance across various conditions. As a rohs-compliant product, it meets strict environmental standards. Packaged in tube format, it ensures secure handling and storage. With its advanced features and durable design, the IXTN21N100 is an excellent choice for professionals seeking high-quality module MOSFET solutions.

IXTN21N100 MOSFET MOD.21A 1000V N-CH SOT227B H.VOLTAGE CHASSI Technical Specifications

• Manufacturer: IXYS
• MountingType: Chassis
• Package  /Case: SOT227B (Minibloc)
• Technology: High Voltage
• FetType: N-CH
• Current(25°C): 21A
• Voltage: 1kV
• RdsOn: 550m Ohms
• PowerDissipation: 500W
• Trr: 1us
• Configuration: Single
• Applications:
• OperatingTemperature: -55°C~+150°C
• Rohs: ROHS
• Packaging: TUBE

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